Large-area low-capacitance InP/InGaAs MSM photodetectorsfor high-speedoperation under front and rear illumination
- 21 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (15) , 1247-1248
- https://doi.org/10.1049/el:19940857
Abstract
Large-area long-wavelength metal-semiconductor-metal (MSM) photodetectors fabricated on the Fe-doped InP/InGaAs material system have been characterised under front and rear illumination employing different thicknesses of the photoactive layer. With a 350 µm diameter detection area, theoretically limited capacitance values (0.75 pF) and very low depletion voltages (< 1 V) were obtained. For an active layer thickness of 0.7 µm, the devices show an external quantum yield of up to 60% and a bandwidth of 0.95 GHz at 10 V bias.Keywords
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