High-performance large-area InGaAs metal-semiconductor-metal photodetectors
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (8) , 910-913
- https://doi.org/10.1109/68.238251
Abstract
The fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors are reported. With a 350- mu m*350- mu m active area, the detectors offer 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/ mu m/sup 2/, an the CW responsivity is 0.4 A/W at 1.3- mu m wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and low capacitance.Keywords
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