Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (10) , 2343-2357
- https://doi.org/10.1109/3.159541
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
- High-performance MSM photodetectors on semiinsulating InP:Fe/InGaAs:Fe/InP:FePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Intrinsic and extrinsic response of GaAs metal-semiconductor-metal photodetectorsIEEE Photonics Technology Letters, 1990
- Transit-time limited frequency response of InGaAs MSM photodetectorsIEEE Transactions on Electron Devices, 1990
- Ultrawide-band long-wavelength p-i-n photodetectorsJournal of Lightwave Technology, 1987
- Numerical study of currents and fields in a photoconductive detectorIEEE Journal of Quantum Electronics, 1987
- Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0–1.7 μmElectronics Letters, 1985
- Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometryJournal of Applied Physics, 1982
- Properties of alternately charged coplanar parallel strips by conformal mappingsIEEE Transactions on Electron Devices, 1968
- On the Induced Current and Energy Balance in ElectronicsProceedings of the IRE, 1941
- Currents Induced by Electron MotionProceedings of the IRE, 1939