Formation of Sendust Films by DC Opposite Sputtering Method
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2A) , L93-95
- https://doi.org/10.1143/jjap.25.l93
Abstract
Sendust films were prepared using DC opposite sputtering equipment. Films with a low coercive force of 0.5 Oe and an initial permeability of 1300 at 6 MHz can be prepared at a deposition rate of 5.5 µm/h without annealing of the films after the deposition. The way in which sputtering conditions influence the coercive force of the films was also investigated.Keywords
This publication has 4 references indexed in Scilit:
- A thin film multi-track recording headIEEE Transactions on Magnetics, 1982
- Metal-in-gap record headIEEE Transactions on Magnetics, 1982
- Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rateIEEE Transactions on Magnetics, 1980
- Preparation by sputtering of thick sendust film suited for recording head coreIEEE Transactions on Magnetics, 1977