Hole conduction in Si3N4 films on Si
- 1 November 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 617-619
- https://doi.org/10.1063/1.89164
Abstract
Dominant hole conduction is observed in thin Si3N4 films deposited on silicon with holes being injected from either aluminum or gold electrodes. Hole transport is confirmed by employing a shallow junction diode detector. Such a diode can serve also as excellent means for separating conduction currents from transient displacement currents under pulsed conditions.Keywords
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