AlInAs Band Gap Modulations Observed by Tem and Optical Measurements
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
At a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.Keywords
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