Preparation and properties of Mn-doped epitaxial gallium arsenide
- 31 March 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (3) , 223-226
- https://doi.org/10.1016/0038-1101(75)90053-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Magnetic field and low temperature sensor made from epitaxial GaAsCryogenics, 1973
- Transport and Photoelectrical Properties of Gallium Arsenide Containing Deep AcceptorsJournal of Applied Physics, 1972
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Silver-Manganese Evaporated Ohmic Contacts to p-type Gallium ArsenideJournal of the Electrochemical Society, 1968
- Behavior of Manganese in GaAsJournal of Applied Physics, 1962