Reflectivity Enhancement of Semiconductors by Q-Switched Ruby Lasers

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Abstract
Reflectivity enhancement of single‐crystal silicon, germanium, gallium arsenide, and indium antimonide and polycrystalline boron and cadmium selenide was observed. The reflectivity variations were produced by irradiating the semiconductor with the output of a Q‐switched ruby laser (6943 Å) with pulses of 30 and 10 nsec. The reflectivity variations were monitored with a pulsed argon‐ion laser (mainly 4880 and 5145 Å). The effect of surface damage at high power levels produced an irreversible reflectivity decrease. Polished samples of molybdenum and tungsten, when irradiated by the Q‐switched ruby‐laser light, exhibited irreversible decreases in reflectivity due to surface damage and reversible variations, which were attributed to elastic deformation. Reflectivity enhancement of semiconductors was attributed to the formation on the semiconductor surface of a liquid film with metallic properties.