Defect and impurity states in silicon nitride
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4490-4493
- https://doi.org/10.1063/1.332647
Abstract
The electronic levels associated with silicon and nitrogen dangling bonds and Si‐H, N‐H, and Si‐Si units within bulk Si3N4 have been calculated using the tight‐binding and recursion methods. The Si dangling bond, the Si‐H σ state and the Si‐Si σ state all lie in the gap. The Si‐Si σ state lies in midgap and could be a long‐term hole trap. The Si dangling bond state lies just below the conduction band and could act as a very efficient electron trap.This publication has 24 references indexed in Scilit:
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