Self-confined metallic interconnects for very large scale integration
- 15 January 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (2) , 263-264
- https://doi.org/10.1063/1.94692
Abstract
A novel method to produce narrow metallic lines is presented. Lines of NiSi2 lithographically formed on SiO2 substrates are oxidized. The formed SiO2 layer consumes most of the Si from the silicide, leaving a metallic Ni line fully confined by SiO2. The associated problems together with the potential utilization are discussed.Keywords
This publication has 2 references indexed in Scilit:
- Thermal oxidation of nickel disilicideApplied Physics Letters, 1982
- Reaction of thin metal films with SiO2 substratesSolid-State Electronics, 1978