Improved neutron radiation hardness for Si detectors: application of low resistivity starting material and/or manipulation of N/sub eff/ by selective filling of radiation-induced traps at low temperatures
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (3) , 221-227
- https://doi.org/10.1109/23.775518
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Radiation hardness of silicon detectors: current statusIEEE Transactions on Nuclear Science, 1997
- Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)IEEE Transactions on Nuclear Science, 1994
- Modeling and simulation of charge collection properties for neutron irradiated silicon detectorsNuclear Physics B - Proceedings Supplements, 1993
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959