The Use of Silicon Structures with Rapid Doping Level Transitions to Explore the Limitations of SIMS Depth Profiling
- 1 January 1986
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Enhanced sticking coefficients and improved profile control using boron and antimony as coevaporated dopants in Si–MBEJournal of Vacuum Science & Technology B, 1985
- Profile distortions and atomic mixing in SIMS analysis using oxygen primary ionsNuclear Instruments and Methods in Physics Research, 1981