Determination of the drift mobility in high-conductivity amorphous silicon
- 1 March 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (3) , 1387-1391
- https://doi.org/10.1063/1.329770
Abstract
A new technique for measuring the drift mobility in semiconductors is proposed. This method consists in measuring the current transient in a Schottky‐barrier device during a reverse bias voltage pulse. Measurements on a‐Si:H doped with 0.2% phosphorous show a temperature activated mobility. The activation energy is 0.13 eV and the drift mobility is about 6.5×10−2 cm2/V sec at room temperature. This technique is particularly applicable to material in which the dielectric relaxation time is shorter than the carrier transit time, precluding time‐of‐flight measurements.This publication has 9 references indexed in Scilit:
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