A new half-micron p-channel MOSFET with LATIPS (large-tilt-angle implanted punchthrough stopper)

Publisher Website

6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1988.32839

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations
Journal of the Electrochemical Society, 1986
Junction depth versus sheet resistivity in BF₂⁺-implanted rapid-thermal-annealed silicon
IEEE Electron Device Letters, 1986
A new half-micrometer p-channel MOSFET with efficient punchthrough stops
IEEE Transactions on Electron Devices, 1986