Ebic evidence for Carbon-based Gettering in EFG Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Self-interstitial enhanced carbon diffusion in siliconApplied Physics Letters, 1984
- The mechanism of swirl defects formation in siliconJournal of Crystal Growth, 1982
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- Impurities in silicon solar cellsIEEE Transactions on Electron Devices, 1980