3.48 ps ECL ring oscillator using over-300 GHz f T / f max InP DHBTs
- 7 August 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (16) , 1215-1217
- https://doi.org/10.1049/el:20030782
Abstract
An ECL gate delay of 3.48 ps/stage in a 19-stage conventional ring oscillator fabricated in an over-300 GHz fT/fmax InP DHBT technology has been demonstrated. This is the first report (to the authors' knowledge) of sub-4 ps ECL gate delay. Large collector current density contributes to the very short gate delay.Keywords
This publication has 4 references indexed in Scilit:
- Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic baseIEEE Electron Device Letters, 2002
- A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technologyIEEE Electron Device Letters, 2002
- Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1995
- Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1994