A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 46-47
https://doi.org/10.1109/vlsic.1996.507710

Abstract

We have developed for the first time a 4-bit microcontroller (MCU) embedded with 4 Kbit ferroelectric non-volatile memory (FeRAM). The MCU integrating FeRAM demonstrates innovative characteristics such as high data storage speed. Low dissipation power and high endurance more than 10/sup 12/ cycles, neither of which has been realized with EEPROM and Flash EEPROM technology. The performances prove that the MCUs embedded with FeRAM will be one of "key" processors for multimedia devices such as PDA and cellular phone.

Keywords

MICROCONTROLLERS
FERROELECTRIC MATERIALS
NONVOLATILE MEMORY
RANDOM ACCESS MEMORY
FERROELECTRIC FILMS
EPROM
CELLULAR PHONES

This publication has 1 reference indexed in Scilit:

A 0.9 V embedded ferroelectric memory for microcontrollers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002