Electron Magnetic Susceptibility and the Band Structure of Silicon-Rich n-Type Silicon-Germanium Alloys
- 1 April 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 56 (2) , 557-561
- https://doi.org/10.1002/pssb.2220560217
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electron Magnetic Susceptibility, Paramagnetic Resonance, and the Band Structure of Silicon-Rich n-Type Silicon–Germanium AlloysPhysica Status Solidi (b), 1971
- The influence of uniaxial stress on the infrared free carrier faraday effect in n-type silicon and germaniumJournal of Physics C: Solid State Physics, 1971
- Cyclotron resonance of electrons in silicon at temperatures up to 200 KProceedings of the Physical Society, 1966
- Effect of Alloying and Pressure on the Band Structure of Germanium and SiliconPhysical Review B, 1963
- Optical investigation of the band structure of Ge-Si alloysJournal of Physics and Chemistry of Solids, 1961
- Cyclotron ResonancePublished by Elsevier ,1960
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958