Fundamental Limits Imposed by Gamma Dose Fluctuations in Scaled MOS Gate Insulators
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1411-1416
- https://doi.org/10.1109/TNS.1984.4333521
Abstract
The statistical methods of Extreme Value Theory [1] are combined with Microdosimetry Theory and applied to the problem of gamma ray ionization fluctuations in the gate insulators of Very Large Scale Integrated (VLSI) MOS circuits, such as memories. It is shown that the fluctuations in dose deposited in scaled gate oxides can be much larger than the nominal dose, as measured by a macroscopic dosimeter, or even by an insulator on a test transistor. Quantitative predictions are made for this effect for a wide range of VLSI circuit dimensions.Keywords
This publication has 3 references indexed in Scilit:
- Scaling of Gamma Dose Rate Upset Threshold in High Density MemoriesIEEE Transactions on Nuclear Science, 1983
- Gamma-Induced Noise in CCDsIEEE Transactions on Nuclear Science, 1981
- Ionizing Events in Small Device StructuresIEEE Transactions on Nuclear Science, 1975