Resonant tunnelling in thermally degenerated molybdenum and platinum silicon Schottky diodes
- 16 July 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 60 (1) , 277-286
- https://doi.org/10.1002/pssa.2210600133
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Resonant tunneling current for general junction potential barrierPhysica Status Solidi (a), 1979
- Electrical Properties of Platinum-Silicon Contact Annealed in an H2AmbientJapanese Journal of Applied Physics, 1978
- Evaluation of the tunnelling current assisted by deep traps in schottky barriersRevue de Physique Appliquée, 1977
- Resonant tunneling through traps in Schottky barriersJournal de Physique, 1977
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976
- Resonant tunneling through Schottky barriersApplied Physics Letters, 1976