GaInAsP/InP Low-Mesa CPBH Surface Emitting Laser with an Optimally Deposited MgO/Si Multilayer Laser Mirror
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6R) , 2692
- https://doi.org/10.1143/jjap.32.2692
Abstract
With an eye to high-temperature cw operation of GaInAsP/InP surface emitting lasers, we have introduced a low-mesa circular planar buried heterostructure for current confinement and a thermally conductive MgO/Si multilayer mirror for heat sinking. The deposition conditions of MgO were optimized to obtain a high mirror reflectivity of over 99%. The lasing operation of a 1.3 µm device loaded with these new materials was demonstrated with a low threshold of 3.5 mA at 77 K under the cw condition.Keywords
This publication has 3 references indexed in Scilit:
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- Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laserIEEE Photonics Technology Letters, 1992
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