Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions
- 31 May 1996
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 80, 313-316
- https://doi.org/10.1016/0368-2048(96)02983-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Radiometry at the NIST SURF II storage ring facilityReview of Scientific Instruments, 1995
- The X-ray energy response of silicon Part A. TheoryNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodesIEEE Transactions on Nuclear Science, 1993
- X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92Atomic Data and Nuclear Data Tables, 1993
- A soft x-ray/EUV reflectometer based on a laser produced plasma sourceJournal of X-Ray Science and Technology, 1992
- Self-calibration of semiconductor photodiodes in the soft x-ray regionReview of Scientific Instruments, 1992
- Stability and quantum efficiency performance of silicon photodiode detectors in the far ultravioletApplied Optics, 1989
- Scattering by ionization and phonon emission in semiconductorsPhysical Review B, 1980