Oscillation burst generation in transferred-electron devices with picosecond optical pulses

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Abstract
Bursts of oscillations have been triggered in GaAs transferred-electron devices by picosecond optical pulses focused onto the region between the gate and anode. The oscillation frequency was varied between 6.7 and 10.5 GHz by changing the position of the optical spot. The burst duration depended logarithmically upon the optical input power, indicating a decay of the optically excited electron-hole plasma with a measured lifetime of 430 psec, and could be varied between 1.5 and 5.0 nsec.