A review of the effects of ion implantation on the photoferroelectric properties of PLZT ceramics

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Abstract
An intrinsic photoferroelectric effect can be used to store high quality photographic images in transparent, ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics. The intrinsic (near-UV) photo-sensitivity of this photoferroelectric image storage process is increased by about four orders of magnitude by coimplanting Ar, Ne and He ions into the surface exposed to image light. Coimplanting Al or Cr and Ne greatly improves the extrinsic (visible-light) photosensitivity and produces a relatively flat photo-response from 400 to 600 nm. This paper summarizes our present knowledge of the photoferroelectric image storage mechanism and reviews the effects of ion implantation with respect to photosensitivity enhancement.