Optical Properties of Ingan/GaN Multi Quantum Well Structures

This publication has 5 references indexed in Scilit:

• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
  Applied Physics Letters, 1997
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• Shortest wavelength semiconductor laser diode
  Electronics Letters, 1996
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  Japanese Journal of Applied Physics, 1996
• Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layer
  Applied Physics Letters, 1995