Generation-recombination noise at 77°K in silicon bars and JFETs
- 28 February 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (2) , 177-179
- https://doi.org/10.1016/0038-1101(79)90110-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Noise of hot carriers in the channel of n silicon junction gate field effect transistorsSolid-State Electronics, 1978
- Experimental determination of highly concentration-sensitive effects of intervalley electron-electron scattering on electric-field-dependent repopulation in n-Si at 77 KApplied Physics Letters, 1974