Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field
- 3 April 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (15) , 2038-2040
- https://doi.org/10.1063/1.126247
Abstract
We demonstrate enhancement of terahertz (THz) emission from indium arsenide at 170 K in magnetic fields (B) up to 8 T. An order of magnitude increase in visible to terahertz conversion efficiency was observed, with no suggestion of saturation of the TE polarization at higher magnetic fields. Free-space electro-optic sampling measurements confirmed the coherent nature of this radiation over the field range investigated, and gave an insight into the carrier motion subsequent to photoexcitation, which may be responsible for the observed THz power enhancement.Keywords
This publication has 8 references indexed in Scilit:
- Spectrum control of THz radiation from InAs in a magnetic field by duration and frequency chirp of the excitation pulsesApplied Physics Letters, 1999
- INTENSE THz-RADIATION SOURCES USING SEMICONDUCTORS IRRADIATED WITH FEMTOSECOND LASER PULSES IN A MAGNETIC FIELDJournal of Nonlinear Optical Physics & Materials, 1999
- Coherent, broadband midinfrared terahertz beam sensorsApplied Physics Letters, 1998
- High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristicsJournal of Applied Physics, 1998
- Broadband detection capability of ZnTe electro-optic field detectorsApplied Physics Letters, 1996
- Terahertz optical rectification from 〈110〉 zinc-blende crystalsApplied Physics Letters, 1994
- Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond opticsJournal of Applied Physics, 1992
- Picosecond photoconducting Hertzian dipolesApplied Physics Letters, 1984