Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films
- 1 November 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 419 (1-2) , 183-188
- https://doi.org/10.1016/s0040-6090(02)00744-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Synthesis and properties of dielectric Bi2(Zn1/3Nb2/3)2O7 thin filmsJournal of the European Ceramic Society, 2001
- Structure and dielectric properties of pyrochlore–fluorite biphase ceramics in the Bi2O3–ZnO–Nb2O5 systemJournal of Materials Research, 2001
- Ba1−xSrxTiO3 Thin Film Sputter-Growth Processes and Electrical Property Relationships for High Frequency DevicesMRS Proceedings, 1999
- Dielectric Properties of Ba1−xSxTiO3 Films Grown on LaAlO3 SubstratesMRS Proceedings, 1999
- Bismuth Pyrochlore Films for Dielectric ApplicationsMRS Proceedings, 1999
- Field-dependent dielectric permittivity of paraelectric superlattice structuresMaterials Science and Engineering: B, 1998
- Nonlinear behavior of thin film SrTiO3 capacitors at microwave frequenciesJournal of Applied Physics, 1998
- Structures, Phase Transformations, and Dielectric Properties of Pyrochlores Containing BismuthJournal of the American Ceramic Society, 1997
- Investigation of the dielectric properties of bismuth pyrochloresSolid State Communications, 1996
- Fabrication and characterization of Ba1−xSr1−xTiO3 tunable thin film capacitorsThin Solid Films, 1995