Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (2) , 204-211
- https://doi.org/10.1109/16.277378
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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