Compensation of mobile-ion movement in SiO2 by ion implantation
- 1 December 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11) , 967-969
- https://doi.org/10.1063/1.90238
Abstract
A study has been undertaken to determine the effect of ion‐implanted fluorine on the properties of SiO2 for use as a gate dielectric in MOS devices. C‐V measurements and bias‐temperature stressing showed that mobile‐ion drift can be compensated for by the implanted ions. Further tests showed that it is the implant damage and not the ion itself which was responsible for the compensation. uv excitation of the samples was used in an attempt to identify the nature of the compensation effect, but the results are not definitive.Keywords
This publication has 3 references indexed in Scilit:
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- Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS DevicesJournal of the Electrochemical Society, 1975
- Neutralization of Na+ Ions in ``HCl-Grown'' SiO2Applied Physics Letters, 1972