Effects of ion implantation on charges in the silicon–silicon dioxide system
- 1 January 1977
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1) , 308-312
- https://doi.org/10.1063/1.323378
Abstract
Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Qss) was observed with the increase being greater for 〈111〉 than for 〈100〉 silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (Nst) generation was also noted which in most cases obscured the Qss increase. Of various heat treatments tested, only a 900 °C anneal in hydrogen annihilated Nst and allowed Qss measurement. Such Nst apparently arises as a consequence of implantation damage at the silicon–silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Qo) was achieved by implantation. The reduction again is presumably damage related and is not negated by high‐temperature annealing but may be counterbalanced by aluminum incorporation in the oxide.This publication has 20 references indexed in Scilit:
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