Optical characterization of ultra-high-purity Zinc Selenide epilayers
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 763-766
- https://doi.org/10.1016/0022-0248(90)91076-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layersPhysical Review B, 1988
- Excitonic transitions in ZnSe epilayers grown on GaAsPhysical Review B, 1988
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs Grown By MBEMRS Proceedings, 1987
- Donor bound-exciton excited states in zinc selenidePhysical Review B, 1981