Interfacial reactions in Pt/InP contacts
- 1 October 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (7) , 4403-4408
- https://doi.org/10.1063/1.354411
Abstract
Interfacial reactions in Pt/InP contacts were examined by transmission electron microscopy and Auger depth profiling. A solid state amorphization reaction occurred after the contacts were annealed for 60 s at 325 °C. Crystallites were observed in the amorphous layer near the boundary between the amorphous phase and the remaining Pt upon annealing at 350 °C. The predominant phase formed upon crystallization was polycrystalline Pt5InP. A cubic phase, which is most likely a supersaturated solution of phosphorus in Pt3In, also formed. As the annealing temperature was increased, the reaction proceeded with the formation of phases that were richer in In and P. For 60 s anneals at temperatures of 500 °C or greater, Pt‐In phases and textured PtP2 were observed, and the film/InP interface exhibited roughness on the scale of tens of nanometers. Both the Pt‐In phases and PtP2 were present at the film/InP interface.This publication has 23 references indexed in Scilit:
- Phase equilibria in the Pt-In-P systemJournal of Applied Physics, 1993
- Solid phase equilibria in the InPPd systemMaterials Science and Engineering: B, 1993
- Reactions between cobalt and gallium arsenide in bulk and thin-film formsMaterials Chemistry and Physics, 1992
- Low Resistance Ohmic Contacts onto n ‐ InP by Palladium Electroless Bath DepositionJournal of the Electrochemical Society, 1990
- Formation and Growth of Amorphous Phases by Solid-State Reactions Between Co Thin-Films and III-V Compound SemiconductorsMRS Proceedings, 1990
- Phase Formation in the Pt/Inp Thin Film SystemMRS Proceedings, 1989
- An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd systemJournal of Materials Research, 1988
- Experimental determination of local-bonding configuration at the early stages of growth of the heterogeneous Pt/InP(110) interface by synchrotron-radiation spectroscopyPhysical Review B, 1988
- Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InPIEEE Electron Device Letters, 1986
- Crystal growth and characterization of PtP2Journal of the Less Common Metals, 1974