Enhanced Intergrain Tunneling Magnetoresistance in Half-Metallic CrO 2 Films
- 28 November 1997
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 278 (5343) , 1607-1609
- https://doi.org/10.1126/science.278.5343.1607
Abstract
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO 2 that were grown by high-pressure thermal decomposition of CrO 3 . High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO 2 into insulating Cr 2 O 3 , which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.Keywords
This publication has 13 references indexed in Scilit:
- Critical Current Suppression in a Superconductor by Injection of Spin-Polarized Carriers from a FerromagnetPhysical Review Letters, 1997
- Interplane Tunneling Magnetoresistance in a Layered Manganite CrystalScience, 1996
- Observation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskitesApplied Physics Letters, 1996
- Spin-Polarized Intergrain Tunneling inPhysical Review Letters, 1996
- Observation of vacuum tunneling of spin-polarized electrons with the scanning tunneling microscopePhysical Review Letters, 1990
- Cr—A New Half-Metallic Ferromagnet?Physical Review Letters, 1987
- CrO2predicted as a half-metallic ferromagnetJournal of Physics F: Metal Physics, 1986
- New Class of Materials: Half-Metallic FerromagnetsPhysical Review Letters, 1983
- The chemical and physical properties of CrO2and tetravalent chromium oxide derivativesCritical Reviews in Solid State and Materials Sciences, 1977
- Electrical Resistivity of Ferromagnetic Chromium DioxideJournal of the Physics Society Japan, 1961