General formulation of the current-voltage characteristic of a p-n heterojunction solar cell
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4) , 2115
- https://doi.org/10.1063/1.327883
Abstract
A derived current‐voltage (I‐V) characteristic for p‐n heterojunction solar cells of the form window/absorber is obtained. The development lends itself to a simple, diagrammatical interpretation of the step‐by‐step collection of the photocurrent flowing out of the base of the absorber. The resulting general I‐V characteristic under illumination is in a form useful for the design of these devices and for the interpretation of their performance.This publication has 8 references indexed in Scilit:
- Band structure and photocurrent collection in crystalline and polycrystalline p-n heterojunction solar cellsSolid-State Electronics, 1979
- Design analysis of the thin-film CdS—Cu2S solar cellIEEE Transactions on Electron Devices, 1977
- Outline and comparison of the possible effects present in a metal–thin–film–insulator–semiconductorJournal of Applied Physics, 1976
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- Mathematical analysis of a heterojunction, applied to the copper sulphide-cadmium sulphide solar cellSolid-State Electronics, 1973
- Current transport in metal semiconductor contacts—a unified approachSolid-State Electronics, 1972
- The electrical characteristics of nZnSe—pGe heterodiodes†International Journal of Electronics, 1968
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938