Two-carrier model for high field conduction in SiO2
- 1 December 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (12) , 5438-5440
- https://doi.org/10.1063/1.1662171
Abstract
The current mean field strength characteristics are calculated for a special model of an insulator in which low‐mobility holes are thermionically emitted from the anode and high‐mobility electrons are cold emitted from the cathode. In the general case, the conduction characteristics are both thickness and temperature dependent.This publication has 7 references indexed in Scilit:
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- Theory of Double Charge Ejection from a DielectricJournal of Applied Physics, 1968
- Photoemission of Holes from Silicon into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Metals into Silicon DioxideJournal of Applied Physics, 1966
- Richardson-Schottky Effect in InsulatorsPhysical Review Letters, 1966
- Current-Voltage Characteristics of Dielectric FilmsJournal of Applied Physics, 1966
- Two-Carrier Space-Charge-Limited Current in a Trap-Free InsulatorJournal of Applied Physics, 1959