Velocity saturation in short channel field effect transistors
- 31 May 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 34 (6) , 447-449
- https://doi.org/10.1016/0038-1098(80)90648-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbandsSolid State Communications, 1978
- Review of experimental aspects of hot electron transport in MOS structuresSolid-State Electronics, 1978
- Transport of hot carriers in semiconductor quantized inversion layersSolid-State Electronics, 1978
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Hot electrons in Si inversion layerSurface Science, 1976
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970