Radiative-lifetime measurements for Si iii 3s4s^3S, S v 3s4f^3F^0, and Si iv and S vi 4f^2F^0

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Abstract
The beam-foil technique has been used to measure radiative lifetimes for the upper states of the transitions 3s3p3P0-3s4s3S in Si III (996 Å), 3s3d3D-3s4ƒ3F0 in SV (568 Å), and 3d2D-4ƒ 2F0 in Si IV (1067 Å) and SVI (465 Å). Absorption oscillator strengths derived from the lifetime values are compared with theoretical and experimental results for analogous transitions in atomic systems of the NaI and MgI isoelectronic sequences. Discrepancies between experiment and theory have been reduced for the Si III, Si IV, and SVI transitions. The SV result reflects effects of configuration interaction in magnesiumlike systems.