Photo-EPR and Spatially Resolved EPR of ASGa in As-Grown GaAs
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Compensation in GaAs crystals due to anti-structure disorderApplied Physics A, 1984
- Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAsPhysical Review B, 1984
- Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAsPhysical Review Letters, 1984
- Experimental Evidence for an Associated Defect Model for the Neutron Generated AsGa Center in Gallium ArsenidePhysica Status Solidi (b), 1984
- Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Optical Properties of As-Antisite andDefects in GaAsPhysical Review Letters, 1984
- Electron irradiation effects in p-type GaAsJournal of Applied Physics, 1982
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982