Use of Mg diffusion in p-type Si to measure the residual P concentration by infrared absorption
- 15 August 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (4) , 189-191
- https://doi.org/10.1063/1.1654854
Abstract
Two possibilities for observing the infrared absorption of residual phosphorus in p‐type silicon are discussed. Experimental results show that in p‐type silicon the pairing of Mg, presumably with boron and/or oxygen, produces donor complexes with ionization energy less than that of phosphorus. The integrated intensity of the phosphorus lines of the sample after Mg diffusion indicates a phosphorus concentration of ∼ 1.5 × 1013 atoms/cm3.Keywords
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