Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4)
- https://doi.org/10.1143/jjap.20.795
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
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- Photoluminescence Studies in Irradiated Si-Doped Gallium ArsenideJapanese Journal of Applied Physics, 1973
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- Effects of Electron Irradiation on Photo-luminescence Spectra of Si-Doped Melt-Grown n-GaAsJapanese Journal of Applied Physics, 1971
- Acceptor Luminescence in High-Purity-Type GaAsPhysical Review Letters, 1970
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966