pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A) , L538
- https://doi.org/10.1143/jjap.28.l538
Abstract
A pnp-type GaAs inversion-base bipolar transistor was fabricated for the first time. The common emitter current gain obtained was β=1010 at 77 K. By measuring the FET mode operation of the GaAs IBT, it was confirmed that the two-dimensional electron gas really worked as a base of the transistor.Keywords
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