Parameter Sensitivities for Hardness Assurance Displacement Effects in Bipolar Transistors: Part II
- 1 January 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 25 (6) , 1550-1554
- https://doi.org/10.1109/tns.1978.4329570
Abstract
A worst-case neutron hardness assurance approach is presented that can be implemented by both the manufacturer and user and is in excellent agreement with the-CRIC data over the normal operating range. The limitations of the technique (VCE(SAT) and severe crowding) are pointed out and suggestions are made on how to approach these limitations.Keywords
This publication has 5 references indexed in Scilit:
- Parameter Sensitivities for Hardness Assurance: Displacement Effects in Bipolar TransistorsIEEE Transactions on Nuclear Science, 1977
- Current Crowding in Hardened Power TransistorsIEEE Transactions on Nuclear Science, 1972
- Application of Neutron Damage Models to Semiconductor Device StudiesIEEE Transactions on Nuclear Science, 1970
- Neutron Hardness Assurance for Power TransistorsIEEE Transactions on Nuclear Science, 1970
- A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and GermaniumIEEE Transactions on Nuclear Science, 1967