Parameter Sensitivities for Hardness Assurance: Displacement Effects in Bipolar Transistors

1 January 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 24 (6) , 2093-2096
https://doi.org/10.1109/TNS.1977.4329171

Abstract

A model of the dependence of displacement damage in bipolar transistors on material parameters can be used to predict worst-case displacement damage constants for transistors. Many real-device complexities, such as parasitic capacitances, some emitter-crowding effects, unknown base grading, can be eliminated by a worst-case approach. The resulting worst-case damage constant for a 2N914 transistor is near the value extrapolated from statistical test data.

Keywords

This publication has 7 references indexed in Scilit:

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IEEE Transactions on Nuclear Science, 1975
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