Experimental Determination of Gain Degradation Mechanisms

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 18 (6) , 387-392
https://doi.org/10.1109/tns.1971.4326458

Abstract

This paper presents and discusses experimental means for identifying the sources of neutron-induced base current in bipolar transistors. Several examples illustrate the predominant determinants of post-irradiation current gain, and the methods facilitate intercomparison of disparate devices. The techniques cited are equally applicable to the study of current-gain and recombination in unirradiated devices.

Keywords

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