A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

This publication has 6 references indexed in Scilit:

• Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors
  Applied Physics Letters, 2000
• Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
  Japanese Journal of Applied Physics, 1999
• Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
• Experimental investigation of a PtSi source and drain field emission transistor
  Applied Physics Letters, 1995
• Silicon field-effect transistor based on quantum tunneling
  Applied Physics Letters, 1994
• Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation
  IEEE Electron Device Letters, 1990