Energy dependence of the pulse height defect in silicon particle detectors
- 31 December 1967
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 55, 238-248
- https://doi.org/10.1016/0029-554x(67)90128-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Determination of fission fragment energies using solid-state detectorsNuclear Instruments and Methods, 1967
- Response of Silicon Fission Detectors to Channeled 127I and 40Ar IonsReview of Scientific Instruments, 1966
- Pulse Height Defect and Energy Dispersion in Semiconductor DetectorsReview of Scientific Instruments, 1966
- Response of semiconductor surface barrier detectors to fission fragmentsNuclear Instruments and Methods, 1965
- Ionization Produced by Energetic Silicon Atoms within a Silicon LatticePhysical Review B, 1965
- Precision Measurements of Correlated Energies and Velocities ofFission FragmentsPhysical Review B, 1965
- The pulse height defect in semiconductor detectorsNuclear Instruments and Methods, 1965
- Multiplication in the Fission Fragment Pulse Height Response of Silicon Surface BarriersIEEE Transactions on Nuclear Science, 1964
- Response of Semiconductor Detectors to Fission FragmentsReview of Scientific Instruments, 1963
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953