A 16Kb electrically erasable nonvolatile memory
- 1 January 1980
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A 16Kb electrically erasable programmable ROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- A 256-bit nonvolatile static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- DIFMOS—A floating-gate electrically erasable nonvolatile semiconductor memory technologyIEEE Transactions on Electron Devices, 1977
- Technology of a new n-channel one-transistor EAROM cell called SIMOSIEEE Transactions on Electron Devices, 1977
- High performance, MOS EPROMs using a stacked-gate cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969