Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride

This publication has 8 references indexed in Scilit:

• In Situ X-Ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP Using N₂
  Japanese Journal of Applied Physics, 2001
• Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
• Patterning of cubic and hexagonal GaN by Cl2/N2-based reactive ion etching
  Applied Physics Letters, 1999
• Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
  Japanese Journal of Applied Physics, 1998
• High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
  Applied Physics Letters, 1997
• Reactive ion etching of GaN layers using
  Semiconductor Science and Technology, 1997
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)
  Applied Physics Letters, 1993
• Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
  Journal of Vacuum Science & Technology A, 1993