Temperature behaviour of mobility is submicron MOSFETs: Possibility of nearly-ballistic transport?
- 31 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3) , 542-546
- https://doi.org/10.1016/0378-4363(85)90641-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layerIEEE Transactions on Electron Devices, 1983
- Electron mobility in short-channel MOSFET's with series resistancesIEEE Transactions on Electron Devices, 1983
- Conductance of small semiconductor devicesSolid State Communications, 1981
- Diffusion effects and "Ballistic transport"IEEE Transactions on Electron Devices, 1981
- Ballistic electron transport in semiconductorsIEEE Transactions on Electron Devices, 1981